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Quantum mechanical effects on double-gate MOSFET scaling

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3 Author(s)
Qiang Chen ; Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA ; Lihui Wang ; J. D. Meindl

In this paper, an analytical quantum mechanical threshold voltage model is developed and verified to be accurate with 2D DESSIS numerical simulations. Quantisation effects on DG MOSFET scalability in a broader context of parameter variations are then examined.

Published in:

SOI Conference, 2003. IEEE International

Date of Conference:

29 Sept.-2 Oct. 2003