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Control of threshold voltage and short channel effects in ultra-thin strained-SOI CMOS

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5 Author(s)
T. Numata ; MIRAI, Assoc. of Super-Adv. Electron. Technol., Kawasaki, Japan ; T. Mizuno ; T. Tezuka ; J. Koga
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In this paper threshold voltage, subthreshold slope and short channel effects, in strained-SOI n-MOSFET and p-MOSFET are examined quantitatively, with emphasis on the impact of band offset in Si/SiGe heterostructure, by two dimensional device simulation.

Published in:

SOI Conference, 2003. IEEE International

Date of Conference:

29 Sept.-2 Oct. 2003