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Effects of SOI film thickness on high-performance microprocessor by 0.13 μm Partially-Depleted SOI CMOS technology

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11 Author(s)
Jianan Yang ; Semicond. Products Sector, Motorola Inc., Austin, TX, USA ; Byoung Min ; Yasuhito, S. ; Laegu Kang
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This paper describes how SOI film thickness affects performance and power consumption of a Partially-Depleted (PD) SOI microprocessor. System level speed/power performance will be compared directly between chips fabricated with different SOI film thickness. The performance improvement is also supported by device level and macro circuit level comparison. Yield issues associated with thinner SOI will also be addressed.

Published in:

SOI Conference, 2003. IEEE International

Date of Conference:

29 Sept.-2 Oct. 2003

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