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Proton induced single event upset in a 4M SOI SRAM

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6 Author(s)
Liu, H.Y. ; Honeywell, Plymouth, MN, USA ; Liu, S.T. ; Golke, K.W. ; Nelson, D.K.
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A non-conventional upset mechanism is proposed to explain the proton test results for our 4M SOI SRAM for the first time in this paper. In a hardened SRAM cell where an active delay element is often used in the feedback loop, single particle hits to a single critical node are not likely to cause an SEU upset. However, when the secondary heavy ions, created by the interactions between high-energy protons and Si nuclei, travel through a critical node as well as the pass gate inside the delay element, the delay element will be shunted out by charge deposited and as a result the stored state can easily be disturbed. Simple calculations based on this assumption yield good correlation to test results in terms of upset cross-section. This upset mechanism will play a more important role as device geometries shrink.

Published in:

SOI Conference, 2003. IEEE International

Date of Conference:

29 Sept.-2 Oct. 2003