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MBE grown GaAs wafers were bonded, using spin on glass, on CMOS and plain Si wafers, GaAs substrate was removed to provide a thin layer of GaAs material, on top of silicon, for device processing. Structural investigation of the GaAs filmoil was done using TEM. Material quality was further investigated using photoluminescence measurements. Built in strain was measured using photoreflectance measurements for a range of temperatures and compared to that of an epitaxially grown GaAs on Si. High quality material that is nearly stress free at room temperature was successfully integrated with Si using the proposed method.
Date of Conference: 30 June-5 July 2002