By Topic

Dispersion of phonon-assisted nonresonant third-order nonlinearities

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Dinu, M. ; Bell Labs., Holmdel, NJ, USA

An analysis of the dispersion of two-photon absorption and Kerr nonlinearity of indirect semiconductors below the indirect bandgap is presented. Similar to the case of linear absorption, third-order nonlinear processes are found to be mediated by phonon-assisted transitions. The Kerr coefficient n2 is positive below the indirect gap, and the dispersion of the third-order nonlinearities is reduced relative to direct semiconductors. The results are compared with existing experimental data in silicon.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:39 ,  Issue: 11 )