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Intersubband absorption saturation in InGaAs-AlAs-AlAsSb coupled quantum wells

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6 Author(s)
A. V. Gopal ; Femtosecond Technol. Res. Assoc. (FESTA), Tsukuba, Japan ; T. Simoyama ; H. Yoshida ; Jun-ichi Kasai
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This paper gives saturation (switching) energy (IS) estimates in an all-optic switch material based on absorption saturation in InGaAs-AlAs-AlAsSb coupled-double quantum wells (cDQWs). A model based on density matrix theory for a 4-level system is used to simulate the pulsed excitation conditions of the experiment in the communication wavelength region. The theoretical estimates are compared with experimentally determined values. A comparison of the IS in two different cDQWs (one with an indium composition in the well of about 53% and without an AlAs stopping layer at the well-barrier interface and another with 72% indium and an AlAs stopping layer) clearly shows that the samples with high indium content are of a better quality compared to those with lattice-matched indium composition (53%). An order-of-magnitude reduction in the IS in an all-optic switch based on cDQWs with high indium content is reported.

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IEEE Journal of Quantum Electronics  (Volume:39 ,  Issue: 11 )