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High voltage (>1kV) and high current gain (32) 4H-SiC power BJTs using Al-free ohmic contact to the base

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6 Author(s)
Yanbin Luo ; ECE Dept., Rutgers Univ., Piscataway, NJ, USA ; Jianhui Zhang ; Alexandrov, P. ; Fursin, L.
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This letter reports the design and fabrication of 4H-SiC bipolar junction transistors with both high voltage (>1kV) and high dc current gain (/spl beta/=32) at a collector current level of I/sub c/=3.83A (J/sub c/=319 A/cm/sup 2/). An Al-free base ohmic contact has been used which, when compared with BJTs fabricated with Al-based base contact, shows clearly improved blocking voltage. A specific on-resistance of 17 m/spl Omega//spl middot/cm/sup 2/ has been achieved for collector current densities up to 289 A/cm/sup 2/.

Published in:

Electron Device Letters, IEEE  (Volume:24 ,  Issue: 11 )

Date of Publication:

Nov. 2003

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