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The on-orbit measurements of single event phenomena by ETA-V spacecraft

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4 Author(s)
T. Goka ; High-Reliability Components Corp., Tokyo, Japan ; S. Kuboyama ; Y. Shimano ; T. Kawanishi

The on-orbit data of single event phenomena were obtained for the CMOS static RAMs equipped in Engineering Test Satellite-V (ETS-V) in a geostationary orbit. The single event latchup and single event upset data were acquired for a period of about three years, and the effects of solar flares were observed. A comparison with the data (single event upset) of TTL SRAMs by Marine Observation Satellite-1 (MOS-1: a medium-altitude satellite) was also conducted. The Poisson distribution and the extreme-value theory (doubly exponential distribution) were adopted to analyze the data. From this analysis a decrease of the number of single events could be found during the solar maximum

Published in:

IEEE Transactions on Nuclear Science  (Volume:38 ,  Issue: 6 )