Determination of SEU parameters of NMOS and CMOS SRAMs

Procedures for determining the SEU parameters for advanced memory devices are demonstrated for CMOS and resistor-loaded NMOS SRAMs. The dimensions of the sensitive volume are either obtained from charge collection measurements on test structures or estimated from similar measurements on the SRAMs themselves. Values of the critical charge determined from simple proton measurements agree with the values obtained for three SRAMs from extensive heavy-ion data.<
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