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Radiation-hardened phototransistor

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3 Author(s)
W. T. Matzen ; Micro Switch Div., Honeywell Inc., Richardson, TX, USA ; R. A. Hawthorne ; W. T. Kilian

A radiation-hardened, monolithic, silicon bipolar phototransistor has been developed and produced. Common emitter current gain at 2 mA collector current is 225 and remains above 140 after irradiation of 1 E13 n/sq cm or 1 Mrad(Si). Device photoresponse to 820 nm light decreases about 30% after 1 Mrad(Si) exposure and 55% after 1 E13 n/sq cm irradiation for typical input light levels. This phototransistor is ideal for applications requiring a radiation-hardened optocoupler

Published in:

IEEE Transactions on Nuclear Science  (Volume:38 ,  Issue: 6 )