By Topic

Radiation-hardened phototransistor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Matzen, W.T. ; Micro Switch Div., Honeywell Inc., Richardson, TX, USA ; Hawthorne, R.A. ; Kilian, W.T.

A radiation-hardened, monolithic, silicon bipolar phototransistor has been developed and produced. Common emitter current gain at 2 mA collector current is 225 and remains above 140 after irradiation of 1 E13 n/sq cm or 1 Mrad(Si). Device photoresponse to 820 nm light decreases about 30% after 1 Mrad(Si) exposure and 55% after 1 E13 n/sq cm irradiation for typical input light levels. This phototransistor is ideal for applications requiring a radiation-hardened optocoupler

Published in:

Nuclear Science, IEEE Transactions on  (Volume:38 ,  Issue: 6 )