By Topic

Freeze-out characterization of radiation hardened N+ polysilicon gate CMOS transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Pantelakis, D.C. ; Harris Semiconductor, Melbourne, FL, USA ; Hemmenway, D.F. ; van Vonno, N.W. ; Sanders, T.J.

Freeze-out behavior of radiation hardened N+ polysilicon gate CMOS devices is studied at liquid-nitrogen temperature before and after irradiation at different dose levels. Explanations are given for the threshold voltage variations and freeze-out effects both before and after irradiation. The degree of freeze-out of the counterdope implant is controlled by temperature, applied gate potential, and applied body-to-source potential. Based on experimental results of this work, freeze-out is not significantly affected by irradiation doses, or the magnitude of the gate bias during radiation

Published in:

Nuclear Science, IEEE Transactions on  (Volume:38 ,  Issue: 6 )