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Charge buildup at high dose and low fields in SIMOX buried oxides

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3 Author(s)
Boesch, H.E., Jr. ; Harry Diamond Lab., Adelphi, MD, USA ; Taylor, T.L. ; Brown, G.A.

Trapped charge buildup was measured and modeled as a function of dose and applied oxide field, εox, for a representative SIMOX (separation by implantation of oxygen) buried oxide. The dominant physical processes controlling the buildup are shown to be space-charge-driven modification of εox and recombination of electrons with trapped holes in low-field regions of the oxide

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Nuclear Science, IEEE Transactions on  (Volume:38 ,  Issue: 6 )