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A 0.24-μm 2.0-V 1T1MTJ 16-kb nonvolatile magnetoresistance RAM with self-reference sensing scheme

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7 Author(s)
Jeong, G. ; Memory Technol. Div., Samsung Electron. Co. Ltd., Yongin, South Korea ; Wooyoung Cho ; Ahn, S. ; Hongsik Jeong
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A nonvolatile 16-kb one-transistor one-magnetic-tunnel-junction (1T1MTJ) magnetoresistance random access memory with 0.24-μm design rules was developed by using a self-reference sensing scheme for reliable sensing margin. This self-reference sensing scheme was achieved by first storing a voltage of the magnetic tunnel junction (MTJ), and then after a time interval storing a reference voltage of the same MTJ (self-reference). The effects of variation in tunneling oxide thickness can be eliminated by this self-reference sensing scheme. As a result, reliable sensing of MRAM devices with MTJ resistance of 2.5-11 kΩ was achieved.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:38 ,  Issue: 11 )