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Charge yield for cobalt-60 and 10-keV X-ray irradiations of MOS devices

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4 Author(s)
M. R. Shaneyfelt ; Sandia Nat. Lab., Albuquerque, NM, USA ; D. M. Fleetwood ; J. R. Schwank ; K. L. Hughes

The radiation response of MOS devices exposed to 60Co and low-energy (~10 keV) X-ray irradiation is evaluated as a function of electric field during exposure. Improved charge yield estimates are obtained for 60Co irradiations at fields below 1 MV/cm by matching voltage shifts due to oxide-trap and interface-trap charge to an E-0.55 electric field dependence. Combining these improved charge yield estimates and calculated dose enhancement factors, the relative response of X-ray to 60Co irradiations is accurately predicted for oxide electric fields from 0.03 MV/cm to 5.0 MV/cm. The ability to predict the relative response to X-ray to 60Co irradiations-should speed acceptance of X-ray testers as a hardness assurance tool

Published in:

IEEE Transactions on Nuclear Science  (Volume:38 ,  Issue: 6 )