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The photoconductivity spectrum of electron and neutron irradiated n lightly doped GaAs

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7 Author(s)
Khanna, S.M. ; Def. Res. Establ. Ottawa, Ont., Canada ; Carlone, C. ; Halle, S. ; Parenteau, M.
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The spectral photoconductivity spectrum of lightly doped n GaAs exposed to electron and neutron irradiation is studied. From the temperature dependence of the photoconductivity, it is deduced that neutron irradiation induces a shallow donor level; photoluminescence experiments suggest that its energy lies 31 meV below the conduction band. Electron irradiation is about factor of 10 more effective than the neutron irradiation in reducing the ratio PC(17)/PC(300). This suggests that the defect donor level associated with electron irradiation lies about 30% below that induced by neutron irradiation

Published in:

Nuclear Science, IEEE Transactions on  (Volume:38 ,  Issue: 6 )

Date of Publication:

Dec 1991

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