By Topic

Effects of switched gate bias on radiation-induced interface trap formation [MOS transistors]

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
N. S. Saks ; US Naval Res. Lab., Washington, DC, USA ; D. B. Brown ; R. W. Rendell

Switched gate bias experiments were used to test the hydrogen model for the time-dependent buildup of interface traps nit after a radiation pulse. In the hydrogen model, slow transport of radiation-induced H+ ions through the oxide to the Si/SiO2 interface is the rate-limiting step in the nit formation process. A model based on dispersive transport theory was used to numerically simulate the time-dependent H+ drift through the oxide toward the gate under negative bias, then back toward the Si/SiO2 interface under positive bias. Good agreement between the simulations and experiment is obtained for the final magnitude of ΔNit, both for positive and negative bias during irradiation. The procedure used for the numerical simulations provides only a lower bound on the transport time when the direction of the gate bias is switched during the Nit buildup. This behavior is due to a memory effect in the dispersive H+ transport

Published in:

IEEE Transactions on Nuclear Science  (Volume:38 ,  Issue: 6 )