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Lateral distribution of radiation-induced damage in MOSFETs

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3 Author(s)
W. Chen ; Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA ; A. Balasinski ; T. -P. Ma

Significant lateral nonuniformity of radiation-induced oxide charge and interface traps in short-channel CMOS transistors was observed. This nonuniformity affects device DC parameters. A modified charge pumping technique was used in this study. Its basic principles are briefly discussed. Results for MOSFETs irradiated under various bias conditions are presented

Published in:

IEEE Transactions on Nuclear Science  (Volume:38 ,  Issue: 6 )