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Effect of bias on thermally stimulated current (TSC) in irradiated MOS devices

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3 Author(s)
D. M. Fleetwood ; Sandia Nat. Lab., Albuquerque, NM, USA ; R. A. Reber ; P. S. Winokur

The electric-field dependence of thermally stimulated current (TSC) in irradiated MOS capacitors for TSC fields ranging from -3 MV/cm to +2 MV/cm was studied. TSC measurements at negative bias following positive-bias irradiation provide useful estimates of the net oxide-trap charge, ΔGot, if the TSC bias is large enough to overcome trapped-hole space-charge effects. Very little TSC is observed for positive-bias irradiation. Under proper TSC bias conditions, TSC and C-V estimates of ΔGot agree well for thick, soft oxides, but differ significantly for thin, hard oxides. Differences between TSC and C-V estimates of ΔG ot for thin, hard oxides are attributed to electron injection into the oxide and capture at trap sites associated with the radiation-induced trapped holes. It is shown that TSC measurements can provide insight into the location of hole traps in MOS oxides that cannot be obtained from standard C-V tests

Published in:

IEEE Transactions on Nuclear Science  (Volume:38 ,  Issue: 6 )