By Topic

Determination of subband energy levels of double quantum well AlGaAs lasers by photoreflectance and self-excited electron Raman scattering

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
W. Susaki ; Osaka Electro-Commun. Univ., Neyagawa, Japan ; S. Ukawa ; N. Ohno ; H. Takeuchi
more authors

In this paper, subband energy levels of an AlGaAs separate-confinement-hetrostructure (SCH) double quantum well (DQW) layer are determined by photoreflectance (PR) and compared with those determined by the self-excited ERS of lasers fabricated from the same DQW structure but with different waveguide thickness. Subband energy levels determined by both measurements are in a good agreement.

Published in:

Compound Semiconductors, 2003. International Symposium on

Date of Conference:

25-27 Aug. 2003