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Photoluminescence and lasing characteristics of 1.3 μm GaInNAs/GaAsP/GaAs strain-compensated quantum wells

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5 Author(s)
M. Kawaguchi ; Tokyo Inst. of Technol., Yokohama, Japan ; T. Miyamoto ; S. Kawakami ; A. Saito
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We investigated photoluminescence (PL) and lasing characteristics of 1.3 μm GaInNAs/GaAsP/GaAs strain-compensated quantum wells by MOCVD. We observed the increase of PL intensity and reduction of the threshold by applying appropriate GaAsP barriers.

Published in:

Compound Semiconductors, 2003. International Symposium on

Date of Conference:

25-27 Aug. 2003