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We present the characterization of the static and noise performances of some commercial Si-Ge heterojunction bipolar transistors from 4.2 K to room temperature. The region of operation considered was the low injection one in view of their possible applications for the readout of an array of cryogenic detectors.
Nuclear Science Symposium Conference Record, 2002 IEEE (Volume:1 )
Date of Conference: 10-16 Nov. 2002