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The thermal stability of one-transistor ferroelectric memory with Pt-Pb5Ge3O11-Ir-poly-SiO2-Si gate stack

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4 Author(s)
Li, Tingkai ; Sharp Labs. of America Inc., Camas, WA, USA ; Hsu, Sheng Teng ; Ulrich, Bruce D. ; Evans, David R.

The thermal stability of one-transistor ferroelectric nonvolatile memory devices with a gate stack of Pt-Pb5Ge3O11-Ir-Poly-SiO2-Si was characterized in the temperature range of -10°C to 150°C. The memory windows decrease when the temperatures are higher than 60°C. The drain currents (ID) after programming to on state decrease with increasing temperature. The drain currents (ID) after programming to off state increase with increasing temperature. The ratio of drain current (ID) at on state to that at off state drops from 7.5 orders of magnitude to 3.5 orders of magnitude when the temperature increases from room temperature to 150°C. On the other hand, the memory window and the ratio of ID(on)/ID(off) of the one-transistor memory device displays practically no change when the temperature is reduced from room temperature to -10°C. One-transistor (1T) memory devices also show excellent thermal imprint properties. Retention properties of 1T memory devices degrade with increasing temperature over 60°C.

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Electron Devices, IEEE Transactions on  (Volume:50 ,  Issue: 11 )