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High-performance self-aligned SiGeC HBT with selectively grown Si1-x-yGexCy base by UHV/CVD

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7 Author(s)
Oda, K. ; Central Res. Lab., Hitachi Ltd., Kokubunji, Japan ; Ohue, E. ; Suzumura, I. ; Hayami, R.
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Si1-x-yGexCy selective epitaxial growth (SEG) was performed by cold-wall, ultrahigh-vacuum chemical vapor deposition, and the effects of incorporating C on the crystallinity of Si1-x-yGexCy layers and the performance of a self-aligned SiGeC heterojunction bipolar transistor (HBT) were evaluated. A Si1-x-yGexCy layer with good crystallinity was obtained by optimizing the growth conditions. Device performance was significantly improved by incorporating C, as a result of applying Si1-x-yGexCy SEG to form the base of a self-aligned HBT. Fluctuations in device performance were suppressed by alleviating the lattice strain. Furthermore, since the B out diffusion could be suppressed by incorporating C, the cutoff frequency was able to be increased with almost the same base resistance. A maximum oscillation frequency of 174 GHz and an emitter coupled logic gate-delay time of 5.65 ps were obtained at a C content of 0.4%, which shows promise for future ultrahigh-speed communication systems.

Published in:

Electron Devices, IEEE Transactions on  (Volume:50 ,  Issue: 11 )

Date of Publication:

Nov. 2003

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