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High brightness InGaN green LEDs with an ITO on n++-SPS upper contact

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12 Author(s)
Chang, C.S. ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Taiwan, Taiwan ; Chang, S.J. ; Su, Y.K. ; Kuo, C.H.
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Indium tin oxide (ITO) (260 nm) and Ni (5 nm)/Au (10 nm) films were deposited onto glass substrates, p-GaN layers, n+-InGaN/GaN short-period-superlattice (SPS), n++-SPS and nitride-based green light-emitting diodes (LEDs). It was found that ITO could provide us an extremely high transparency (i.e., 95% at 520 nm). It was also found that the 1.03×10-3 Ωcm2 specific contact resistance of ITO on n++-SPS was reasonably small. Although the forward voltage of the LED with ITO on n++-SPS upper contacts was slightly higher than that of the LED with Ni/Au on n++-SPS upper contacts, the 20 mA output power and external quantum efficiency of the former could reach 4.98 mW and 8.2%, respectively, which were much larger than the values observed from the latter. The reliability of ITO on n++-SPS upper contacts was also found to be reasonably good.

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Electron Devices, IEEE Transactions on  (Volume:50 ,  Issue: 11 )