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For the first time the fabrication of a distributed amplifier based on n-type Si/SiGe-MODFETs is presented. The realised amplifier consists of six identical stages and has a gain of 5.5 dB. The bandwidth of this amplifier is 32 GHz. The gain ripple up to this frequency is ±0.8 dB. The return losses at the input and output are better than 10 dB. Using a coplanar waveguide layout for the amplifier no via-holes and backside processing is needed. The MMIC has a size of 0.9×3.2 mm2.