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Dependence of charge-retention time in 4H-SiC MOS capacitors on interface defects and applied gate voltage

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4 Author(s)
Cheong, K.Y. ; Sch. of Microelectron. Eng., Griffith Univ., Brisbane, Qld., Australia ; Dimitrijev, S. ; Han, J. ; Harrison, H.B.

In this paper, we have investigated factors that affect the charge-retention time in 4H-SiC MOS capacitors, used as nonvolatile random-access memory elements. The charge-retention time is extracted from high temperature capacitance-transient (C-t) measurements. The SiC-SiO2 interface traps, that relate to gate oxide processing conditions and the applied gate voltage (VG) as the main operation-related parameter are investigated. It is found that (1) the charge-retention time depends strongly on the interface-trap density and (2) the time is shortened when the applied gate voltage is reduced.

Published in:

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

Date of Conference:

11-13 Dec. 2002