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Suppression of interdiffusion in In0.5Ga0.5As/GaAs quantum dots

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6 Author(s)
Fu, L. ; Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia ; Lever, P. ; Tan, H.H. ; Jagadish, C.
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In this work, Ga-doped spin-on glass (SOG) film and electron beam evaporated titanium dioxide (TiO2) film were deposited onto a In0.5Ga0.5As/GaAs quantum dot (QD) structure in order to suppress the interdiffusion. It is demonstrated that Ga-doped SOG was only able to restrict the occurrence of impurity free vacancy disordering which is promoted by normal SiO2 film, however the TiO2 film suppressed the thermal intermixing due to the thermal stress effect and possibly metallurgical reactions between GaAs and TiO2.

Published in:

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

Date of Conference:

11-13 Dec. 2002