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Modelling spin polarized optoelectronic processes

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2 Author(s)
H. B. Sun ; Dept. of Phys., Queensland Univ., Brisbane, Qld., Australia ; M. C. de Oliveria

We model the spin polarized optoelectronic processes in a GaAs-based light emitting diode under injection of spin-filtered electrons. To describe the microscopic dynamics we derive the quantum Langevin equations for photon number and carrier numbers. The polarization degree of the light generated by light emitting diode is calculated and compared with the experiment results.

Published in:

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

Date of Conference:

11-13 Dec. 2002