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Absorption of intense terahertz radiation in InAs/AlSb heterojunction

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2 Author(s)
Cao, J.C. ; Shanghai Inst. of Microsystem & Inf. Technol., Chinese Acad. of Sci., Shanghai, China ; Lei, X.L.

We have theoretically investigated the free-earner absorption of intense terahertz (THz) radiation in InAs/AlSb heterojunctions (HJ), by considering multiple photon process and interband impact ionization. As many as needed hole subbands and multiphoton channels are self-consistently taken into account. It's indicated that the THz radiation with a larger amplitude or a lower frequency has a stronger effect on electric transport characteristics. Good agreement is obtained between the calculated absorption percentages and the available experimental data for InAs/AlSb HJ's at the radiation frequency fac = 0.64 THz.

Published in:

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

Date of Conference:

11-13 Dec. 2002