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Optical calibration of electron concentrations in heavily doped n-GaAs films

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5 Author(s)
Stiens, J. ; Lab for Micro- & Optoelectronics, Vrije Univ., Brussels, Belgium ; Kotov, V. ; Shkerdin, G. ; Borghs, G.
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An accurate knowledge of carrier concentrations is important for many semiconductor devices. A variety of optical and electrical measurement techniques has been developed. In this paper we discuss and compare different linear reflection measurement techniques to calibrate the electron concentration N in thin n-GaAs layers in the range between 1 and 20 × 1018 with accuracies down to 1-2 % by exploiting optical plasma resonance effects.

Published in:

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

Date of Conference:

11-13 Dec. 2002