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Intersubband absorption, high-resolution X-ray diffraction and photoluminescence were investigated in the n-type Ga0.7In0.3N0.01As0.99/GaAs0.998N0.002 quantum wells grown by solid-source molecular beam epitaxy (SSMBE). The bound-to-continuum absorption peaks at around 9.5 μm were observed in both as-grown and in-situ annealed samples. The effective mass theory was also carried out to calculate the intersubband absorption in the GalnNAs/GaAsN QWs. The experimental absorption curve is in good agreement with our calculation result.