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Simulation study of the DC and AC characteristics of an improved InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with an InGaP wide bandgap collector

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1 Author(s)
Shiou-Ying Cheng ; Dept. of Electr. Eng., Oriental Inst. of Technol., Taipei, Taiwan

In this work, an improved InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with an InGaP wide bandgap collector is investigated. In the emitter-base region, the thin narrow bandgap n-type GaAs layer is sandwiched between a wide bandgap N-type InGaP confinement layer and a narrow bandgap p-type GaAs base layer. In the collector-base structure, an undoped 30 A˚-thick GaAs spacer and a heavily doped 30 A˚-thick GaAs layer are inserted between the base and the collector. Due to the absence of potential spike both at base-emitter and base-collector junctions, the proposed device shows the lower offset and saturation voltages.

Published in:

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

Date of Conference:

11-13 Dec. 2002

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