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A deep level transient spectroscopy study of vacancy-related defect profiles in channeled ion implanted silicon

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5 Author(s)
M. D. H. Lay ; Sch. of Phys., Melbourne Univ., Vic., Australia ; J. C. McCallum ; G. de M Azevedo ; P. N. K. Deenapanray
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The effect of implantation angle on the profile of vacancy-related defects, represented by the divacancy and vacancy-phosphorus centres, in n-type <100> Cz-Si implanted with 450 keV P or 600 keV Si ions to a dose of 2 × 10-9 ions·cm-2 , has been examined using deep level transient spectroscopy depth profiling. Implants were performed with samples aligned with 10° twists from the [110] planar direction and various tilts from the <100> axis. The peak depth of the VP/V2 profile exhibits a systematic variation with the implantation angle: shifting towards the surface, narrowing and increasing in peak concentration as the implantation angle is progressively varied from the aligned direction. For well-channeled 450 keV P ions, the peak in the defect profile is approximately 0.9 microns deeper than the peak in the vacancy profile predicted using the binary collision codes MARLOWE and Crystal-TCAS. The effect of the surface proximity on defect concentrations has been considered by comparing those profiles obtained for 450 keV P implanted samples with those of 600 keV Si implanted samples.

Published in:

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

Date of Conference:

11-13 Dec. 2002