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A new InGap/AlGaAs/GaAs composite-emitter heterojunction bipolar transistors

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7 Author(s)
Tsai, M.K. ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Wu, Y.W. ; Tan, S.W. ; Chu, M.Y.
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This paper reported a new composite-emitter heterojunction bipolar transistor (CEHBT) with a composite emitter formed of a 0.04 μm In0.5Ga0.5P bulk layer and a 0.06 μm Al0.45Ga0.55As/GaAs digital graded superlattice (DGSL) layer. The CEHBT's exhibit a small collector-emitter offset voltage of 55 mV and a base-emitter turn-on voltage of 0.87 V, which is 0.4 V lower than that of 1.27 V of the InGaP/AlGaAs abrupt-emitter HBT. It is found that CEHBTs exhibits a current gain as high as 250 and is even enhanced to 385 when only a DGSL layer is used for passivation layer.

Published in:

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

Date of Conference:

11-13 Dec. 2002