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Silicon dioxide nanoparticles are used as oxide layer in metal-oxide-silicon tunneling diodes. With its non-uniformity in thickness, tunneling current is concentrated in carrier accumulation region. Both electron and hole can be confined to enhance radiative recombination rate. Electroluminescence at silicon band edge (1.1 μm) with external quantum efficiency 1.5×10-4 has been achieved. KOH wet etch also contributes to improvement on efficiency by removing nonradiative recombination center at surface. Frequency response is exploited as tool for extraction radiative and nonradiative recombination rate.