By Topic

Cat-CVD as a new fabrication technology of semiconductor devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
H. Matsumura ; Japan Adv. Inst. of Sci. & Technol., Ishikawa, Japan ; A. Izumi ; A. Masuda

Cat-CVD, often called hot-wire CVD, is a new method to obtain device quality thin films at low substrate temperatures. In the method, gas molecules are decomposed by catalytic cracking reactions on heated catalyzer placed near substrates, instead of plasma decomposition in the conventional plasma enhanced CVD (PECVD). This paper is to review this Cat-CVD from fundamental mechanisms to device application. The features of Cat-CVD are demonstrated with comparison of PECVD.

Published in:

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

Date of Conference:

11-13 Dec. 2002