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Growth of InGaAs quantum dots by metal organic chemical vapour deposition

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3 Author(s)
Lever, P. ; Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia ; Tan, H.H. ; Jagadish, C.

In0.5Ga0.5As quantum dots have been grown by metal-organic chemical vapour deposition (MOCVD). The size and density of these dots are strongly affected by the growth parameters. The growth rate and V/III affect the density of the dots. Growth interrupts without AsH3 are found to cause a bimodal distribution in the dots, however a small amount of AsH3 during the interrupt can suppress the formation of larger dots. A thin layer of GaP below the In0.5Ga0.5As quantum dots changes the formation of the dots. The dots are smaller in width and height. The luminescence from these dots is blueshifted due to interdiffusion between the dots and the GaP buffer layer.

Published in:

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

Date of Conference:

11-13 Dec. 2002

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