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Selective area epitaxy for photonic integrated circuits and advanced devices

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4 Author(s)
Coleman, J.J. ; Illinois Univ., Urbana, IL, USA ; Swint, R.B. ; Yeoh, T.S. ; Elarde, V.C.

Using metal-organic chemical vapor deposition (MOCVD) selective area epitaxy (SAE) it is possible to grow different layer thicknesses and compositions on different areas of a wafer in a single growth step. This makes possible the integration of discrete devices and enables the fabrication of advanced devices.

Published in:
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

Date of Conference: 11-13 Dec. 2002

Page(s):
241 - 246
ISSN :
1097-2137
Print ISBN:
0-7803-7571-8
INSPEC Accession Number:
7977212
Digital Object Identifier :
10.1109/COMMAD.2002.1237237

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