By Topic

Impact of deposition parameters on the characterizations of highly orientated aluminum nitride for film bulk acoustic wave resonator device

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Jiang Ning ; Inst. of Microelectron., Singapore, Singapore ; Sharma, R.K. ; Feng Hanhua ; Wang Zhe
more authors

AlN thin films were grown on Si(100) and Al/Si(100) substrates by pulsed dc sputtering system using 99.999% purity aluminum as target, and Ar+N2 gas mixture as precursor. The impact of deposition parameters, including dc power, deposition pressure and substrate temperature, on material properties has been investigated. A good correlation between film crystallinity and dc power, as well as gas pressure, was addressed by X-ray diffraction, and verified by scanning electron microscope (SEM) and ellipsometry. It is found that highly c-axis oriented h-AlN can be obtained at low gas pressure and low deposition rate. For AlN on Al/Si(100) substrate, micro-crack was observed, which was assigned to the large thermal stress between AlN film and Al layer. Crack-free surface has been achieved by reducing the deposition temperature. The deposition mechanism of AlN deposition is discussed. This work provides a material foundation for film bulk wave resonator (FBAR) devices fabrication.

Published in:

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

Date of Conference:

11-13 Dec. 2002