Cart (Loading....) | Create Account
Close category search window

Emission from defects in thin gan epilayers grown on vicinal 4H-SiC substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Xu, S.J. ; Dept. of Phys., Hong Kong Univ., China ; Wang, H.J. ; Cheung, S.H. ; Li, Q.
more authors

Wurtzite GaN epilayers directly grown on 4H-SiC (0001) misoriented by 0, 3.5, 5, 8, and 21° with plasma-assisted molecule beam epitaxy have been studied using variable-temperature photoluminescence. A strong emission peak locating at energy position -70 meV lower than the near band-edge emission peak at 3.47 eV is found in the emission spectra of the GaN films on 4H-SiC misoriented by 8 and 21°. It is clear that one type of structural defect leads to the peak. Stacking mismatch boundaries are supposed to be the candidate causing the optical transition. Combined with the low-temperature photoluminescence excitation spectra of the films, the location of the electronic level induced by the structural defect is determined to be about 104 meV above the valence-band maximum of GaN.

Published in:

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

Date of Conference:

11-13 Dec. 2002

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.