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Zinc oxide as a contact material for p-GaN

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10 Author(s)
Kaminska, E. ; Inst. of Electron Technol., Warsaw, Poland ; Piotrowska, A. ; Barcz, A. ; Golaszewska, K.
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The fabrication procedure of transparent and conducting ZnO films yielding ohmic contacts to p-GaN has been developed. The microstructure and electronic properties of p-GaN/ZnO interface were studied using atomic force and electron transmission microscopies, and X-ray photoelectron spectrometry. The observed ohmic behaviour is explained in terms of formation of a tunnelling p-GaN/ n+-ZnO junction.

Published in:

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

Date of Conference:

11-13 Dec. 2002

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