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Optoelectronic devices based on lateral junctions are particularly interesting because carriers are injected perpendicular to both the optical cavity and the direction of quantum confinement (i.e. the epitaxial growth direction). An edge-emitting InGaAs/GaAs laser diode with a lateral p-n junction was fabricated by MBE on a patterned GaAs (311)A substrate. The injection current dependence of the multimode emission was studied. Experimental results revealed a gain spectrum that favors long-wavelength modes as injection current increases.