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Atomic layer epitaxy of ZnO for substrates for GaN epitaxy

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8 Author(s)
M. Godlewski ; Inst. of Phys., Polish Acad. of Sci., Warsaw, Poland ; A. Szczerbakow ; K. Kopalko ; E. Lusakowska
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ZnO layers have been grown by atomic layer epitaxy using a gas flow version of the technique. ZnO films have been obtained from either a double exchange chemical reaction, a single exchange reaction, or from elemental components, i.e., from zinc and oxygen. We have also studied ZnO layers prepared by the oxidisation of ZnS layers. Silicon ([001] and [111]), GaAs, sapphire, sapphire/GaN or soda lime glass substrates have been used. We demonstrate that ZnO films are suitable as buffer layers for GaN epitaxy.

Published in:

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

Date of Conference:

11-13 Dec. 2002