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The offset voltage of heterojunction bipolar transistors using two-dimensional numerical simulation with current boundary condition

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3 Author(s)
L. L. Liou ; Wright Lab., Wright-Patterson AFB, OH, USA ; J. Ebel ; C. I. Huang

The offset voltage of an emitter-mesa AlGaAs-GaAs heterojunction bipolar transistor was obtained from the transistor's current-voltage characteristics calculated using a two-dimensional numerical simulation with a current boundary condition at the base contact. The results show that the offset voltage strongly depends on the position of the emitter-base p-n junction and on the width of the emitter mesa

Published in:

IEEE Transactions on Electron Devices  (Volume:39 ,  Issue: 3 )