Referenced Items are not available for this document.
The double lightly doped drain concave (DLC) MOSFET has been developed for sub-half-micrometer MOSFETs which can operate at a 5-V supply voltage. This structure has an impurity profile of n+-n--p--p along the sidewall of the groove. It is found that the DLC MOSFET has excellent characteristics, such as high drain sustaining voltage, less short-channel effect, high current drivability, and high reliability, due to the double LDD concave structure. The DLC MOSFET is one of the most promising device structures for sub-half-micrometer MOSFETs
Published in:
Electron Devices, IEEE Transactions on
(Volume:39
,
Issue:
3
)
Date of Publication: Mar 1992
- Page(s):
- 671 - 676
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 4165971
- Digital Object Identifier :
- 10.1109/16.123493
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Mar 1992
- Sponsored by :
- IEEE Electron Devices Society
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