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Fabrication, characterization, and analysis of a DRIE CMOS-MEMS gyroscope

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2 Author(s)
Huikai Xie ; Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA ; Fedder, G.K.

A gyroscope with a measured noise floor of 0.02°/s/Hz12/ at 5 Hz is fabricated by post-CMOS micromachining that uses interconnect metal layers to mask the structural etch steps. The 1 × 1 mm lateral-axis angular rate sensor employs in-plane vibration and out-of-plane Coriolis acceleration detection with on-chip CMOS circuitry. The resultant device incorporates a combination of 1.8-μm-thick thin-film structures for springs with out-of-plane compliance and 60-μm-thick bulk silicon structures defined by deep reactive-ion etching for the proof mass and springs with out-of-plane stiffness. The microstructure is flat and avoids excessive curling, which exists in prior thin-film CMOS-microelectromechanical systems gyroscopes. Complete etch removal of selective silicon regions provides electrical isolation of bulk silicon to obtain individually controllable comb fingers. Direct motion coupling is observed and analyzed.

Published in:

Sensors Journal, IEEE  (Volume:3 ,  Issue: 5 )

Date of Publication:

Oct. 2003

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