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Modulating the bipolar junction transistor subjected to neutron irradiation for integrated circuit simulation

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3 Author(s)
Liou, J.J. ; Dept. of Electr. Eng., Univ. of Central Florida, Orlando, FL, USA ; Yuan, J.-S. ; Shakouri, H.

Bipolar junction transistors (BJTs) are susceptible to particle bombardment in radiative environment. A model that is capable of predicting the performance of a BJT subjected to neutron irradiation and that is suitable for SPICE circuit simulation is presented. It is shown that neutron irradiation affects the emitter-base space-charge region capacitance slightly but strongly influences the forward-active current gain. Results calculated from the present model compared favorably with measured dependencies available in the literature. The model was implemented in SPICE, and the performance of a BJT differential amplifier was simulated

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Electron Devices, IEEE Transactions on  (Volume:39 ,  Issue: 3 )