Referenced Items are not available for this document.
The BiNMOS gate delay analysis including high current transients has been developed. The modeling equations account for the high electric field effect in the nMOS transistor and emitter crowding, base pushout, and base conductivity modulation in the bipolar transistor. In examining the switching transient of a BiNMOS driver, the base pushout mechanism exhibits a detrimental effect on the gate propagation delay. The circuit modeling methodology provides a fast turn-around design evaluation of sensitivity of process and device parameters into circuit performance. Computer simulation of a BiNMOS driver using the present analysis is compared with PISCES device simulation in support of physical reasoning
Published in:
Electron Devices, IEEE Transactions on
(Volume:39
,
Issue:
3
)
Date of Publication: Mar 1992
- Page(s):
- 587 - 592
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 4165960
- Digital Object Identifier :
- 10.1109/16.123482
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Mar 1992
- Sponsored by :
- IEEE Electron Devices Society
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