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Noise performance at cryogenic temperatures at AlGaAs/InGaAs HEMT's with 0.15-μm T-shaped WSix gates

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4 Author(s)
Joshin, K. ; Fujitsu Labs. Ltd., Atsugi, Japan ; Mimino, Y. ; Ohmura, S. ; Hirachi, Y.

T-shaped 0.15-μm WSix gate HEMTs have been fabricated on AlGaAs/InGaAs MBE wafers. Their S-parameters, output noise spectral density Pno, and noise temperatures T e at cryogenic temperatures, were measured. The current gain cutoff frequency fT increases from 61 GHz at 295 K to 87 GHz at 90 K. Pno and Te measurements indicate that the hot-electron effect is noticeable at low temperatures at high drain current. At 30 GHz, the noise temperature is 19±3 K with an associated gain of 10.4 dB at the physical temperature of 20 K. The results demonstrate the great potential of AlGaAs/InGaAs HEMTs for low-temperature applications

Published in:

Electron Devices, IEEE Transactions on  (Volume:39 ,  Issue: 3 )

Date of Publication:

Mar 1992

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